1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
نویسندگان
چکیده
The low frequency (1/f) noise characteristics of Schottky-gated strained-Si n-channel modulation doped field effect transistors have been investigated as a function of Ge concentration for different virtual substrates. The gate voltage dependence of the 1/f noise agrees well with the McWhorter carrier number fluctuations model. The trap density (extracted using a Ge dependent potential barrier height and tunnelling constant) is low in devices on thick virtual substrates (Nt = (2–6) 10 cm 3 eV ), and does not degrade with the increase of the Ge concentration from 30% to 40%. This trap density is the same for thin Helax virtual substrates (He ions implanted thin substrate) but increases two orders of magnitude for thin low-temperature grown substrates. 2009 Elsevier Ltd. All rights reserved.
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